H11F1M – Photo FET Optocoupler IC (DIP-6)

Description

The H11F1M is a specialized optocoupler that utilizes a Gallium-Aluminum-Arsenide (GaAlAs) infrared-emitting diode coupled to a symmetrical bilateral silicon photo-detector. This detector acts as an ideal isolated Field-Effect Transistor (FET), specifically engineered for the distortion-free control of low-level AC and DC analog signals.

Because it operates as an isolated FET, the H11F1M is perfect for applications requiring high-fidelity signal control where standard transistor-output optocouplers might introduce non-linearity or offset errors. It serves effectively both as a remote variable resistor and as a high-precision analog switch, offering significant advantages in signal purity and electrical isolation.

Note: Product images are for reference only. The actual product may vary in appearance or manufacturer marking depending on stock availability.

Features

• Variable Resistor Mode: Offers a resistance range from 100Ω to 300MΩ.
• Low Capacitance: 15pF shunt capacitance for minimal signal degradation.
• Analog Switch Mode: Extremely low offset voltage with 60 Vpk-pk signal capability.
• Reliability: 100GΩ I/O isolation resistance; no charge injection or latch-up issues.
• Safety: UL recognized (File #E90700).
• Package: Industry-standard 6-pin through-hole (DIP-6) package.

Benefits

• Provides distortion-free control for sensitive analog circuits.
• Ideal for applications where linear signal reproduction is critical.
• Ensures high galvanic isolation between control and signal paths.
• Eliminates common switching artifacts like charge injection.

Applications

• Consumer Appliances
• Industrial Motor Control
• Precision Analog Signal Switching
• Remote Variable Resistance Control
• Low-Level Signal Modulation

Package Includes

• 1 x H11F1M Photo FET Optocoupler IC (DIP-6)

Specifications