Description
The TK22E10N1 N-Channel Silicon MOSFET is a robust, high-performance power transistor engineered for demanding switching and power control applications. Rated for a 100V breakdown voltage and 22A continuous drain current, this device is designed to handle significant power loads with exceptional efficiency. Its extremely low resistance when turned on minimizes power loss, making it an ideal choice for high-frequency switching circuits and power supply designs.
Engineered for reliability, the TK22E10N1 is built to withstand harsh operating conditions and transient voltage spikes. Whether you are building voltage regulators, motor controllers, or high-speed switching systems, this MOSFET delivers the consistent performance and durability required for professional electronic hardware.
Features
- High Voltage Capacity: 100V breakdown voltage for versatile power handling.
- Ultra-Low Resistance: Very low resistance when turned on for reduced heat and maximum efficiency.
- Fast Switching Performance: Designed for efficient high-frequency operation.
- Enhanced Reliability: Built to handle rugged industrial performance and power surges.
- Standard Polarity: N-Channel configuration for simplified drive circuitry.
- Stable Operation: Low leakage current characteristics for precise control and minimal energy waste.
Benefits
- Significantly improves power conversion efficiency in switching voltage regulators.
- Reduces the need for large heat sinks due to low power loss characteristics.
- Increases system longevity by providing robust protection against voltage surges.
- Simplifies high-frequency circuit design with low drive requirements.
- Compatible with a wide range of industrial and consumer electronic power modules.
Applications
- Switching Voltage Regulators (DC-DC Converters)
- Motor Control and Drive Circuits
- Solar Inverter Systems
- Battery Management Systems
- High-Frequency Power Amplifiers
- Uninterruptible Power Supplies
- LED Driver Modules
- Industrial Power Supplies
- Automotive Electronics and Control Systems
- DIY Power Electronic Projects and Prototyping
Package Includes
- 1 x TK22E10N1 N-Channel Silicon MOSFET
Specifications
| Parameter | Value |
|---|---|
| Product Series | TK22E10N1 |
| Polarity | N-Channel |
| Drain-Source Breakdown Voltage | 100 V |
| Continuous Drain Current | 22 A |
| Drain-Source Resistance | 11.5 mOhms |
| Gate-Source Voltage | 20 V |
| Gate Charge | 28 nC |
| Power Dissipation | 72 W |
| Dimensions | 10mm x 16mm x 4.5mm |
| Shipping Weight | 0.008 kg |
| Shipping Dimensions | 8 x 6 x 2 cm |
