Description
The IRF540N N-Channel Power MOSFET is a high-performance power transistor designed for reliable switching and power management. Featuring a 100V drain-source breakdown voltage and 33A continuous drain current, this MOSFET is optimized for high-speed switching and exceptional efficiency. Its design minimizes energy loss, making it a preferred choice for professional-grade power supplies, motor drivers, and industrial automation control circuits.
Housed in the industry-standard TO-220AB package, the IRF540N is fully avalanche-rated and built to withstand harsh operating conditions and transient voltage spikes. Whether you are working on portable device power management, consumer electronics, or large-scale industrial projects, this MOSFET delivers the rugged performance and thermal stability required for demanding circuit architectures.
Features
- High Power Capacity: 100V breakdown voltage with a 33A continuous drain current rating.
- Efficient Performance: Low resistance when turned on (44 mOhms) reduces power dissipation and heat generation.
- Rugged Design: Fully avalanche rated and dynamic voltage tested for maximum reliability.
- Fast Switching: Engineered for efficient operation in high-frequency switching circuits.
- Standard Packaging: TO-220-3 (TO-220AB) package for easy through-hole mounting and heatsink integration.
- Wide Temperature Range: Stable operation from -55°C to 175°C, suitable for extreme environments.
Benefits
- Enhances system reliability in power-intensive electronic modules.
- Reduces heat sink requirements and thermal management complexity.
- Provides robust protection against voltage surges and transient electrical stress.
- Simplifies drive circuitry design for both professional and hobbyist electronics.
- Cost-effective pack of 2 units, ideal for bridge circuits and dual-channel applications.
Applications
- Power Management Systems
- Industrial Automation and Control
- Portable Device Power Modules
- Consumer Electronics
- DC-DC Converters and Voltage Regulators
- Motor Control and Drive Circuits
- Solar Inverter Systems
- Battery Management Systems
- Audio Power Amplifiers
- High-Power Switching Prototyping
Package Includes
- 2 x IRF540N N-Channel Power MOSFET (TO-220-3 Package)
Specifications
| Parameter | Value |
|---|---|
| Product Series | IRF540N |
| Polarity | N-Channel |
| Case / Package | TO-220-3 (TO-220AB) |
| Mounting Type | Through Hole |
| Drain-Source Breakdown Voltage | 100 V |
| Continuous Drain Current | 33 A |
| Drain-Source Resistance | 44 mOhms |
| Gate-Source Voltage | 20 V |
| Power Dissipation | 140 W |
| Dimensions | 10mm x 4.4mm x 15.65mm |
| Shipping Weight | 0.008 kg |
| Shipping Dimensions | 8 x 6 x 2 cm |
