Description

The IR2111 is a high-voltage, high-speed power MOSFET and IGBT driver with dependent high and low-side referenced output channels. Designed for half-bridge applications, it features advanced HVIC and latch immune CMOS technologies, providing robust and reliable operation even in noisy power-switching environments.

The high-side channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V. Its integrated dead-time control prevents shoot-through currents, making it an excellent, low-cost choice for motor control, SMPS, and inverter applications.

Note: Product images are for reference only. The actual product may vary in appearance depending on manufacturer marking.


Features

  • Channel Configuration: High and low-side output channels in a single DIP-8 package.
  • Voltage Rating: Floating channel designed for bootstrap operation up to +600V.
  • Shoot-Through Prevention: Integrated dead-time protection prevents simultaneous conduction.
  • Logic Compatibility: CMOS Schmitt-triggered inputs with pull-down for reliable signal processing.
  • Robust Design: Under-voltage lockout (UVLO) protection and latch-up immunity.

Benefits

  • Simplifies the design of high-frequency power inverter stages.
  • Ensures device safety by preventing catastrophic cross-conduction.
  • Compatible with a wide range of input logic levels (3.3V to 15V).
  • Small footprint allows for compact PCB design in power conversion modules.

Applications

  • Half-Bridge Inverter Stages
  • Motor Drives
  • Switch-Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Electronic Ballasts

Package Includes

  • 1 x IR2111 Half-Bridge Gate Driver IC (DIP-8)

Specifications

Parameter Specification
Product Name IR2111
Device Type Half-Bridge Gate Driver
Package / Case DIP-8
Max Voltage Rating 600V
Mounting Type Through Hole
Shipping Weight 0.001 kg
Shipping Dimensions 4 × 4 × 1 cm

Refund Reason