Description
The IR2111 is a high-voltage, high-speed power MOSFET and IGBT driver with dependent high and low-side referenced output channels. Designed for half-bridge applications, it features advanced HVIC and latch immune CMOS technologies, providing robust and reliable operation even in noisy power-switching environments.
The high-side channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V. Its integrated dead-time control prevents shoot-through currents, making it an excellent, low-cost choice for motor control, SMPS, and inverter applications.
Note: Product images are for reference only. The actual product may vary in appearance depending on manufacturer marking.
Features
- Channel Configuration: High and low-side output channels in a single DIP-8 package.
- Voltage Rating: Floating channel designed for bootstrap operation up to +600V.
- Shoot-Through Prevention: Integrated dead-time protection prevents simultaneous conduction.
- Logic Compatibility: CMOS Schmitt-triggered inputs with pull-down for reliable signal processing.
- Robust Design: Under-voltage lockout (UVLO) protection and latch-up immunity.
Benefits
- Simplifies the design of high-frequency power inverter stages.
- Ensures device safety by preventing catastrophic cross-conduction.
- Compatible with a wide range of input logic levels (3.3V to 15V).
- Small footprint allows for compact PCB design in power conversion modules.
Applications
- Half-Bridge Inverter Stages
- Motor Drives
- Switch-Mode Power Supplies (SMPS)
- DC-DC Converters
- Electronic Ballasts
Package Includes
- 1 x IR2111 Half-Bridge Gate Driver IC (DIP-8)
Specifications
| Parameter | Specification |
|---|---|
| Product Name | IR2111 |
| Device Type | Half-Bridge Gate Driver |
| Package / Case | DIP-8 |
| Max Voltage Rating | 600V |
| Mounting Type | Through Hole |
| Shipping Weight | 0.001 kg |
| Shipping Dimensions | 4 × 4 × 1 cm |







