CNY65B – Phototransistor Output Optocoupler IC (DIP-4)

Description

The CNY65B is a high-safety optocoupler featuring a gallium arsenide infrared-emitting diode optically coupled to a silicon phototransistor. Designed to meet the most stringent safety requirements, the components are mounted directly opposite one another within a 4-pin plastic package, providing a minimum 3 mm thickness through insulation.

This device is engineered for high-voltage isolation, offering a rated recurring peak voltage (VIORM) of 1450 Vpeak. Its robust construction makes it an ideal choice for applications where high-voltage safety and electrical isolation are critical, such as industrial equipment and power supply systems.

Note: Product images are for reference only. The actual product may vary in appearance or manufacturer marking depending on stock availability.

Features

• Rated recurring peak voltage (VIORM): 1450 Vpeak
• Minimum thickness through insulation: 3 mm
• High safety isolation design
• Comparative Tracking Index (CTI): 200 (VDE 0303/IEC 60112 compliant)
• Compliant with RoHS and WEEE directives
• 4-pin DIP package for through-hole assembly

Benefits

• Superior electrical safety for high-voltage applications
• High creepage and clearance distances for enhanced reliability
• Reliable signal transmission while maintaining complete galvanic isolation
• DIP-4 form factor facilitates standard PCB through-hole mounting

Applications

• High-Voltage Power Supply Feedback Loops
• Galvanic Isolation in Industrial Control Systems
• Safety Interlocks in Medical and Industrial Equipment
• Signal Isolation between High-Voltage and Low-Voltage Circuits

Package Includes

• 1 x CNY65B Phototransistor Output Optocoupler IC (DIP-4)

Specifications